Photoluminescence of operational AlAshyphen;GaAshyphen;AlAs doublehyphen;barrier resonant tunneling structures withphyphen;type contact layers reveals the charging and subsequent discharging of the hole subbands in the quantum well by sequential resonant tunneling throughout the region of the first three hole resonances. The linewidth of the quantum well luminescence shows freehyphen;carrier broadening at each of the resonances. Accumulation and tunneling of photocreated electrons are also prominent.
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