Laserhyphen;induced luminescence band in Gehyphen;doped (Al,Ga)As multilayer structures

摘要

A new luminescence band is observed in optically excited (Al, Ga)As multilayer structures that were previously subjected to intense laser irradiation. The band is shifted by 90 meV to a longer wavelength with respect to the bandhyphen;band recombination of regions not exposed to radiation. The laser power density necessary for processing is 0.55 MW/cm2for times of sim;100 mgr;sec. The processed region is located at thepnjunction with a width of 0.7 and a depth of 0.15 mgr;m.