MBE grown InAs/AlSb heterostructures with AlAs- and InSb-typeinterfaces were investigated by tunnelling spectroscopy using ascanning tunnelling microscope (STM). STM surface topography revealeda different electronic surface morphology of the thin InAs/AlSbheterostructure in the case of AlAs and InSb interfaces. Scanningtunnelling spectroscopy (STS) gives an understanding of the origin oflocal morphology fluctuations. STS suggests the occurrence ofclassical and quantum effects influencing the energy-band-structureformation in the case of these thin heterostructures.
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