Scanning near-field microscopy in the millimeter wave region is applicable to non-destructive test of a material, in high spatial resolution much smaller than the wavelength. In our scanning near-field microscope system, the reflection coefficients of object provide its image contrast. Consequently, the material constant of object, which actively determines the reflection coefficients, such as relative dielectric constant, can be evaluated from the image contrast quantity. The following two points for the quantification evaluation are presented in this paper: 1) the improvement of the microscopy system in order to reduce the remarkable "noise" caused by any planar objects, and 2) the development of equivalent circuit of our microscope system having a slit-type probe. Applying a hemisphere-shaped or a higher tanδ material base under an object reduced the fluctuation of the measured data from more than 10 down to less than 5, and the calculation data by the developed equivalent circuit was comparable to the measurement ones.
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