Ultraviolet (UV) light-emitting diodes (LEDs) were fabricated on an MN-Template and a sapphire substrate. The full-width at half maximum of the X-ray diffraction rocking curve for GaN (10-12) reflection of the LED structure grown on an MN-Template was 177 arcsec. The dislocation density of the LED structure grown on an MN-Template determined by a Cathode-luminescence observation was 2.0 × 10{sup}8cm{sup}(-2). The quality of the LED structure grown on an MN-Template was better than that of structure grown on a sapphire substrate. When the these LEDs was operated at a forward-biased current of 20 mA at room temperature, the emission wavelength and the output power were approximately 382 nm, 4mW; respectively.
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