GaAs surface emitting lasers with circular buried heterostructure grown by metalorganic chemical vapor deposition and twohyphen;dimensional laser array

摘要

A metalorganic chemical vapor deposition (MOCVD) was used to grow both doublehyphen;heterostructure wafers and circular buried heterostructures for GaAlAs/GaAs surface emitting lasers. A vertical microcavity was formed with a diameter of 10 mgr;m and a cavity length of 6 mgr;m by a twohyphen;step MOCVD growth and fully monolithic technology. Threshold currents under roomhyphen;temperature pulsed conditions ranged from 50 to 100 mA with a minimum of 50 mA. cw operation up to 160 K was obtained. In addition, a densely packed 5times;5 SE laser array with 20 mgr;m separation was demonstrated with a minimum threshold of 600 mA.