The differential capacitance with bias voltage of aluminium-cadmium sulphide-aluminium thin film switching diodes have been studied. Such capacitance is attributed to the formation of a thin aluminium oxide layer between the lower electrode and cadmium sulphide film. The results are analysed and found to agree with Goodman's theory. The surface state density is also computed from the observed data. A simple mechanism, based on these results, is proposed to explain the observed switching phenomena.
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