ELECTRON MICROSCOPE OBSERVATION OF LATTICE DISORDER IN IONhyphen;IMPLANTED SILICON

摘要

A technique of electron microscope observation of a replica of the chemical etched surface has been used to see the disorder produced around the singlehyphen;ion paths in Inhyphen;implanted Si. Structures of variable dimensions ranging from about 100 Aring; up to nearly 600 Aring; in diameter have been observed, with a density of about 1010cmminus;2in a very thin layer in the surface.