The influence of parasitic bipolar transistor on high-frequency performance of thin-film SOI power MOSFETs

摘要

We have studied the influence of a parasitic bipolar transistor on the high-frequency characteristics of an SOI power MOSFET. We carried out two types of numerical simulation based on experimentally obtained results: a transient simulation and a harmonic balance simulation. The results indicate that the parasitic bipolar effect degraded the high-frequency performance of the RF power MOSFET, for example, gain, power added efficiency, and intermodulation distortion. In particular, the third-order intermodulation distortion of the quasi-SOI device was about 23 better than that of the conventional SOI device under 2 GHz operation.