Influence of doping on the liquidhyphen;amorphous transition induced by picosecond laser irradiation of Si

摘要

The effect of Bi doping on the quench of amorphous Si directly from the melt during 30hyphen;ps, 0.53hyphen;mgr;m laser irradiation has been studied. The amorphous thickness (45 nm) in Bi implanted samples was observed to increase 50percnt; over the corresponding undoped samples (25 nm). No change in the Bi profile was detected upon amorphization.