Cavity length dependence of the wavelength of strainedhyphen;layer InGaAs/GaAs lasers

摘要

The lasing wavelength of a strainedhyphen;layer InGaAs/GaAs single quantum well laser has been found to depend strongly on the cavity length. The relationship between the lasing wavelength and the cavity length was established experimentally and a cavity length tuning mechanism for a quantum well laser is thus made possible.