Residual carbon acceptor incorporation in gallium arsenide grown by metalorganic chemical vapor deposition

摘要

Two mechanisms controlling residual carbon acceptor incorporation in GaAs grown by atmospheric pressure metalorganic chemical vapor deposition have been identified: (1) the removal of the first methyl group from trimethylgallium in the gas phase, and (2) the removal of the first hydrogen atom from AsH3adsorbed on the substrate surface. An analysis of the chemical reactions involved shows that the likely source of the residual carbon acceptor is the surface adsorbed trimethylgallium molecule rather than other carbon species in the reactor.