Picosecond carrier dynamics in optically illuminated glow discharge hydrogenated amorphous silicon

摘要

We have found that a picosecond time relaxation of photoexcited carriers appears after an optical illumination in glow discharge hydrogenated amorphous silicon. The origin of this rapid relaxation is qualitatively explained by the relaxation of excited carriers to increased shallow localized states after the optical illumination. The experimental results have been analyzed by a multiple trapping mechanism taking into account shallow and deep localized states.