Si microprobe array with on-chip MOSFETs has been developed for recording activities from neurons. Selective vapor-liquid-solid (VLS) growth provides successfully Si microprobe array on Si (111) substrates. The Si probe array has been grown using catalyst-Au dot array and Si{sub}2H{sub}6 gas source molecular-beam-epitaxy (GS-MBE) at the gas pressure of 10{sup}(-3) Pa at the temperatures from 500℃ to 700℃. The MOSFETs fabricated on Si (111) substrate instead of Si (100) can be used in on-chip IC for the VLS-Si probe array. The MOSFETs were fabricated on Si(111) substrate and Au dots were placed at drain regions of the MOSFETs in order to grow VLS-Si probes. The VLS growth at 700℃ was carried out using the substrate including MOSFETs with Au dots. At the temperature of the VLS growth annealing substrate in vacuum chamber and Au-diffusion into the substrate could change the properties of the MOSFETs. Electrical characteristics of the MOSFETs were measured before and after the VLS process. Under the growth conditions, the MOSFETs indicated no changes on the characteristics due to the VLS growth. and these results confirmed that the VLS growth at temperature of 700℃ or less allows Si growth after IC process. In this paper, we discuss the Si probes growth on MOSFETs, effects of the Au diffusion and MOSFETs capability for realizing on-chip IC for VLS-Si probe array chip. Application of the microchip with Si probe array to neural measurement was also discussed.
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