Anisotropy of the electron Hall mobility in 4H, 6H, and 15R silicon carbide

摘要

Hall effect measurements in a Hallhyphen;bar configuration are performed on nitrogenhyphen;dopednhyphen;type bulk 4H, 6H, and 15R SiC single crystals cut into small parallelepipeds with their longest edges either parallel or perpendicular to theccirc; axis. In the temperature range investigated (40ndash;700 K), an anisotropy of the electron Hall mobility is observed in all three polytypes. While the mobility perpendicular to theccirc; axismdash;with magnetic field perpendicular or parallel to theccirc; axismdash;is greater than the mobility parallel to theccirc; axis for 6H and 15R SiC, 4H SiC shows the opposite behavior. copy;1994 American Institute of Physics.