Effect of germanium implantation on metalhyphen;oxidehyphen;semiconductor avalanche injection

摘要

The effect of germanium on the hot electron current of a metalhyphen;oxidehyphen;semiconductor device has been studied by avalanche electron injection from the silicon to the silicon dioxide. Different doses of germanium ranging from 1012to 1015atoms/cm2are implanted into the Sihyphen;SiO2interface. The lsquo;lsquo;luckyrsquo;rsquo; hot electron population is suppressed by the germanium implantation. We have used the chargehyphen;voltage technique to measure the interface state density. The interface state density increase caused by the Ge implantation is negligible if the dose is lower than 1014Ge/cm2. Our results show that the Ge implantation is a promising method to solve the hot carrier problem that has become important in submicrometer devices.