Entropy factor of donor level in gold implanted silicon

摘要

Rutherford backscattering spectrometry and spreading resistance techniques have been used to determine the concentration profiles of gold implanted on and diffused inphyphen;type silicon. The measurement of the gold concentration is possible by the solution of the charge neutrality condition and thus it requires the determination of the entropy factorXassociated with the ionization of the gold donor level. The value of 28plusmn;2 compares well with the latest determination ofXobtained by using rather complex techniques.