Electronic properties of solhyphen;gelhyphen;derived oxides on silicon

摘要

Solhyphen;gelhyphen;derived SiO2, borosilicate, and aluminosilicate thin films deposited on silicon and heated for 5 min at temperatures of 1000thinsp;deg;C or lower exhibit dielectric strength as great as 5 MV/cm and interface state densities as low as sim;1times;1011/cm2thinsp;eV. These values represent significant improvements over previous solhyphen;gelhyphen;derived oxides on semiconductors and indicate that solhyphen;gel processing can provide device quality oxides in situations where native oxides are unavailable or exhibit poor dielectric behavior, e.g., amorphous, hydrogenated silicon or IIIhyphen;V compound semiconductors.