Electromagnetic 3-D Model for Active Linear Devices: Application to pHEMTs in the Linear Regime

摘要

In this paper, we describe a three-dimensional (3-D) electromagnetic (EM) approach to the modeling of active devices in their linear regime. The technique basically relies on the self-consistent introduction of distributed controlled current sources in the 3-D EM simulation of passive components. The approach is validated by comparing measured and calculated results for a pseudomorphic high electron-mobility transistor in the millimeter-wave range. However, it may also be applied to a larger class of fieldeffect transistors, including MESFETs.