Recent Progress towards realizing GaN/AlGaN Quantum Cascade Lasers

摘要

The potential GaN/AlGaN THz QCL has been analyzed theoretically in details. Room temperature THz lasing is predicted and active region designs are proposed. Some designed structures with more than 200 periods have been grown by MBE. Double metal waveguide processing has also been under development based on MBE QCL structures grown on MOCVD AlGaN-on-Si.