Improvement of optical characteristics of Al0.48In0.52As grown by molecular beam epitaxy

摘要

The photoluminescence linewidth (4 K) of Al0.48In0.52As was reduced to 15 meV and its dependence was determined to be a strong function of the substrate temperature and As4overpressure. Raman spectroscopy correlates the luminescence broadening to the crystallinity of the AlInAs. The ratio of the allowed longitudinal optical phonon to forbidden transverse optical phonon Raman peak heights is 10:1.