机译:Nanoscale investigations of the electronic surface properties of Cu(In,Ga)Se_2 thin films by scanning tunneling spectroscopy
Helmholtz-Zentrum Berlin für Materialien und Energie, Hahn-Meitner-Platz 1, 14109 Berlin, Germany;
Department of Physics, Yale University, New Haven, CT 06511, United States;
Band gap; Cu(In; Ga)Se2; Grain boundaries; Granular inhomogeneities; Scanning tunneling spectroscopy; Surface defects;