Ultrathin textured polycrystalline oxide with a high electron conduction efficiency prepared by thermal oxidation of thin polycrystalline silicon film onn+polycrystalline silicon

摘要

This letter presents an ultrathin textured polycrystalline oxide (polyoxide) (le;100 Aring;) prepared by thermal oxidation of thin polycrystalline silicon (polysilicon) film onn+polysilicon. The presented textured polyoxide exhibits a much higher electron injection efficiency, a much smaller electron trapping rate, and a much larger charge to breakdown than the normal polyoxide. The value ofQbdof the textured polyoxide could be more than 3000 C/cm2even under 100 mA/cm2stressing.