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首页> 外文期刊>IEEE Transactions on Microwave Theory and Techniques >A 275-425-GHz Tunerless Waveguide Receiver Based on AlN-Barrier SIS Technology
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A 275-425-GHz Tunerless Waveguide Receiver Based on AlN-Barrier SIS Technology

机译:A 275-425-GHz Tunerless Waveguide Receiver Based on AlN-Barrier SIS Technology

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We report on a 275-425-GHz tunerless waveguide receiver with a 3.5-8-GHz IF. As the mixing element, we employ a high-current-density Nb-AlN-Nb superconducting-insulating-superconducting (SIS) tunnel junction. Thanks to the combined use of AlN-barrier SIS technology and a broad bandwidth waveguide to thin-film microstrip transition, we are able to achieve an unprecedented 43percent instantaneous bandwidth, limited by the receiver's corrugated feedhorn. The measured double-sideband (DSB) receiver noise temperature, uncorrected for optics loss, ranges from 55 K at 275 GHz, 48 K at 345 GHz, to 72 K at 425 GHz. In this frequency range, the mixer has a DSB conversion loss of 2.3 +- 1 dB. The intrinsic mixer noise is found to vary between 17-19 K, of which 9 K is attributed to shot noise associated with leakage current below the gap. To improve reliability, the IF circuit and bias injection are entirely planar by design. The instrument was successfully installed at the Caltech Submillimeter Observatory (CSO), Mauna Kea, HI, in October 2006.

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