Observations of barrier recombination in GaAshyphen;AlGaAs quantum well structures

摘要

Using laser structures with a window in the contact stripe, we have observed recombination from the wells and barrier regions of GaAshyphen;AlGaAs quantum well lasers. The magnitude of the ratio of emission intensities from the barrier and the well, and the dependence of this ratio upon injection current, are in good agreement with a calculation in which the carrier populations in well and barrier are in thermal equilibrium at the lattice temperature (300 K).