4H-SiC Avalanche Photodiodes for 280 nm UV Detection

摘要

We designed and fabricated 4H-SiC PIN avalanche photo-diodes (APD) for UV detection. The thickness of an intrinsic layer in a PIN structure was optimized in order to achieve the highest quantum efficiency at the wavelength of interest. The optimized 4H-SiC PIN APDs exhibited a maximum external quantum efficiency of > 80 at the wavelength of 280 nm and a gain greater than 40000. Both electrical and optical characteristics of the fabricated APDs were in agreement with those predicted from simulation.