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首页> 外文期刊>Mapan: Journal of Metrology Society of India >Modified Ultrasonic Technique to Study Gd-Doped ZnO Films
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Modified Ultrasonic Technique to Study Gd-Doped ZnO Films

机译:改进的超声技术研究Gd掺杂ZnO薄膜

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摘要

Normal ultrasonic transducers of 0.5, 1, and 2 MHz are modified using delay lines which are made of Quartz. Such modification is to ameliorate the capability of the transducer to investigate Gd-doped ZnO thin films whose thickness is too thin. The normal transducers cannot test materials that have too thin thickness due to the near fields of these transducers. The near field is considered as blind area of the transducer. Therefore, the specimen under test must have thickness bigger than the near field of the used transducer, or instead delay lines can be used. Samples of Gd-doped ZnO thin films are prepared using sol gel technique. The ultrasonic pulse echo method is used at room temperature. Flaws are found in different prepared specimens. Results show that such delay lines are suitable to ameliorate the ultrasonic transducer to test Gd-doped ZnO thin films.
机译:0.5、1 和 2 MHz 的普通超声换能器使用由石英制成的延迟块进行修改。这种修改是为了提高探头研究厚度过薄的Gd掺杂ZnO薄膜的能力。普通探头无法测试厚度过薄的材料,因为这些探头的近场。近场被认为是换能器的盲区。因此,被测试样的厚度必须大于所用探头的近场,或者可以使用延迟块代替。采用溶胶凝胶技术制备了Gd掺杂的ZnO薄膜样品。超声波脉冲回波法在室温下使用。在不同的制备标本中发现缺陷。结果表明,这种延迟块适用于改善超声换能器对Gd掺杂ZnO薄膜的测试。

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