Interfacial order in epitaxial NiSi2

摘要

Highhyphen;quality epitaxial NiSi2films have been fabricated on lang;111rang; Si substrates and examined by grazinghyphen;angle Rutherford backscattering and channeling techniques. The channeled backscattering yields are close to singlehyphen;crystal values and permit examination of the silicidehyphen;silicon interface. The yields indicate that the number of disordered Ni atoms at the interface must be less than 1.5times;1015Ni/cm2.