We report 10 mW cw roomhyphen;temperature operation of an electrically pumped verticalhyphen;cavity surfacehyphen;emitting laser diode without a heat sink. This same laser produces 19 mW cw when cooled slightly below room temperature. In addition, we present a 9 mW cw laser with a threshold voltage of 1.6 V, and series resistance of 18 OHgr;. These are the first surfacehyphen;emitting lasers fabricated by phasehyphen;locked epitaxy. They are also believed to be the highest power and lowest threshold voltage electrically pumped verticalhyphen;cavity structures reported to date. These results establish that phasehyphen;locked epitaxy has important applications in the fabrication of surfacehyphen;emitting lasers and many other structures with similar materials requirements.
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