Si1minus;xGexfilms were deposited at 620thinsp;deg;C by very low pressure chemical vapor deposition. The effects of H2dilution and deposition pressure on Si1minus;xGexgrowth rate were examined. Under the conditions employed here, both H2dilution and deposition pressure were found to affect the growth rate and its peak as a function of Ge incorporation in the film. The suppression of Si1minus;xGexgrowth rate from H2at low Ge contents was observed. The growth rate enhancement by increasing deposition pressure is dependent on Ge content and becomes more significant as Ge increases. The implications of these observations for Si1minus;xGexgrowth rate are discussed.
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