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首页> 外文期刊>電子情報通信学会技術研究報告. レ-ザ·量子エレクトロニクス. Lasers and Quantum Electronics >Monolithically Integrated 1.55μm 4-channel DFB Laser Array by MOVPE Selective Area Growth for CWDM Systems
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Monolithically Integrated 1.55μm 4-channel DFB Laser Array by MOVPE Selective Area Growth for CWDM Systems

机译:Monolithically Integrated 1.55μm 4-channel DFB Laser Array by MOVPE Selective Area Growth for CWDM Systems

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摘要

Monolithically integrated four-channel distributed feedback (DFB) User array has been fabricated by metal organic vapor phase epitaxy (MOVPE) selective area growth for 1.55 μm coarse-wavelength division multiplexing (CWDM) systems. Wide-stripe MOVPE selective area growth and electron-beam lithography are used to obtain wide CWDM channel spacing of 20nm. Compared to hybrid integration of discrete lasers, monolithic integration of laser array on a single substrate greatly simplifies device alignment and packaging process.
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