Model-independent determination of 2D strain distribution in ion-implanted silicon crystals from x-ray diffraction data

摘要

Two-dimensional strain profiles for silicon crystals implanted with 100 keV boron ions both before and after annealing (1000for 15 min) have been determined from x-ray diffractometry data. Deformation maps show the variations of the lattice distortion perpendicular to the surface as a function of both the lateral position and depth in the crystal. The 2D maps suggest that the radiation point defect profile can vary significantly due to localized strain at the edges of the oxide-mask windows and to thermal annealing.