机译:Effects of oxygen partial pressure on resistive switching characteristics of ZnO thin films by DC reactive magnetron sputtering
State Key Laboratory for Silicon Materials, Zhejiang University, Hangzhou 310027, China;
College of Electronics and Information, Hangzhou Dianzi University, Hangzhou 310018, China;
A. Thin films; A. ZnO; D. Resistive switching; E. Magnetron sputtering;