Investigation of rapidhyphen;thermalhyphen;oxidized porous silicon

摘要

We report that the photoluminescence of porous Si that was quenched by lowhyphen;temperature thermal annealing was restored by further annealing in an oxygen atmosphere at high temperature (750thinsp;deg;Cle;Tle;1100thinsp;deg;C). The intensity of the photoluminescence recovered to near the ashyphen;anodized value and the peak wavelength was red shifted by approximately 100 nm. The oxidized porous Si has been found to have lower resistance and higher photoelectric efficiency than ashyphen;anodized material.