Ion implantation of Si in Behyphen;implanted In0.53Ga0.47As

摘要

Ion implantation of Si has been used to createn+layers in Behyphen;implanted InGaAs epilayers. A peak electron concentration of 7times;1018cmminus;3, a sheet resistance of 28 OHgr; per square, and an average electron mobility of 3000 cm2/Vs are measured in layers implanted with doses of 5.6times;1013cmminus;2and 14times;1013cmminus;2at 100 and 250 keV, respectively, and proximity cap annealed at 670deg;C for 15 min. Activation efficiencies of 86 and 38percnt; are found for the low and high energy implants, respectively.