Surface nitridation process of silicon dioxide by fluorine and excited nitrogen treatment (2)

摘要

In p-chanel MOSFETs, Boron dopant penetration through the thin gate oxide changes threshold voltage. Surface nitridation of silicon oxide is will be effective to suppress the boron penetration. In this paper, we tried surface nitridation of silicon oxide by the exposure to fluorine and to remote-plasma-excited nitrogen. we investigated depth profile of nitrogen and fluorine in the nitrided oxide by angle resolved x-ray photoelectron spectroscopy. Moreover, we fabricated MOS capacitors with the nitrided oxide and measured high-frequency C-V characteristics.