Short cavity GaAs/AlGaAs multiquantum well lasers by dry etching

摘要

A reactive ion beam etching method with Cl2plasma is applied to fabricate short cavity GaAs/AlGaAs multiquantum well lasers grown by molecular beam epitaxy. Threshold currents as low as 38 mA are achieved for the 20hyphen;mgr;mhyphen;long cavity lasers. The very short cavity lasers show single longitudinal mode operation under pulsed conditions. Cavity length dependence of the threshold current is also investigated for the dryhyphen;etched lasers with cavity lengths varying from 20 to 500 mgr;m.