Thin oxynitride film metalhyphen;oxidehyphen;semiconductor transistors prepared by lowhyphen;pressure rapid thermal chemical vapor deposition

摘要

Thin silicon oxynitride (Sihyphen;Ohyphen;N) films have been deposited using lowhyphen;pressure rapid thermal chemical vapor deposition (RTCVD) with silane (SiH4), nitrous oxide (N2O), and ammonia (NH3) as the reactive gases. Metalhyphen;oxidehyphen;semiconductor transistor transconductance measurements showed decreasing peakgmvalues but improved high field degradation characteristics. This is consistent with previous work on thermally nitrided oxides and suggests that the films are perhaps under tensile stress. Hot carrier stress at maximum substrate current was performed with the Sihyphen;Ohyphen;N films displaying larger threshold voltage shifts when compared to furnace SiO2indicating the possible existence of hydrogen related traps.