Surface recombination velocities on processed InGaPphyphen;njunctions

摘要

InGaPphyphen;njunction mesa diodes were fabricated by wet or dry etching, and the surface recombination velocities (Sv) measured from the size dependence of the current densityhyphen;voltage characteristics. Within experimental error, the dry etching does not increase theSvalues, which are in the range 4.4ndash;5.2times;104cmthinsp;sminus;1. Subsequent low temperature annealing or plasma exposure did not degrade the surface properties of the mesa diodes, and some improvement was observed with (NH4)2Sxtreatment. While the InGaP diodes are relatively insensitive to typical processing steps, comparable AlGaAsphyphen;njunction show much larger changes in surface recombination velocities. thinsp;