机译:Depth profile characterization of ultra shallow junction implants
Physikalisch-Technische Bundesanstalt, Abbestr. 2-12, Berlin 10587, Germany;
Fondazione Bruno Kessler, via Sommarive 18, Povo, Trento 38100, Italy;
Institute for Materials Research, University of Salford, Salford M5 4WT, United Kingdom;
Elemental depth profile; Grazing incidence X-ray fluorescence analysis; Ultra shallow junctions;