Variation of the critical layer thickness with In content in strained InxGa1minus;xAshyphen;GaAs quantum wells grown by molecular beam epitaxy

摘要

The critical widthLcfor misfit dislocation generation has been determined for molecular beam epitaxy grown strained InxGa1minus;xAs (0.1xle;1) quantum wells in a GaAs matrix by means of photoluminescence measurements. For the full alloy region the dependenceLc(x) is in good agreement with the theoretical expression proposed by J. W. Matthews and A. E. Blakeslee lsqb;J. Cryst. Growth27, 118 (1974)rsqb;.