Efficient generation at 421 nm by resonantly enhanced doubling of GaAlAs laser diode array emission

摘要

The 842hyphen;nm diffractionhyphen;limited emission from an injectionhyphen;locked laser diode array was frequency doubled using a monolithic sphericalhyphen;mirror KNbO3crystal cavity. Maximum unidirectional external 421 nm power of 24 mW was generated with 167 mW of pump power. Maximum total internal secondhyphen;harmonic power and conversion efficiency of 64 mW and 45percnt; were obtained. Effects of heating in the crystal are described.