Laterally injected lowhyphen;threshold lasers by impurityhyphen;induced disordering

摘要

Novel laterally injected lasers were fabricated by impurityhyphen;induced disordering (IID). The laterally injected IID (LID) lasers have a selfhyphen;aligned structure and planar configuration; its processing procedures are almost identical to that used for our recently reported vertically injected IID lasers, and are considerably simpler than those of any other laterally injected laser yet reported. The LID lasers have a minimum threshold currentIth=3.2 mA (typicalIth=4 mA) and a maximum light output 11 mW, with a differential quantum efficiency eegr;d=32percnt; per facet under roomhyphen;temperature continuoushyphen;wave operation. The LID lasers can also be injected vertically by deliberately using ann+hyphen;doped (instead of semihyphen;insulating) GaAs substrate and making additional ohmic contacts on the bottom surface of the wafer. A number of interesting aspects about the LID lasers were revealed by comparing theLhyphen;Icharacteristics of the laser under different injection modes, and by studying theIhyphen;Vcharacteristics of different combinations of the top and bottom ohmic contacts.