P-type ZnO layer formation by excimer laser doping

摘要

Epitaxial ZnO were formed by oxidation of epitaxial ZnSe on Si (111) substrate by RP-MOCVD. P-type ZnO layer was fabricated with Sb as a dopant by excimer laser irradiation. Ohmic contact electrodes were formed with evaporated Au metal. These fabricated ZnO layer were found as p-type ZnO layer by Hall measurement and the resistivity was 8×10{sup}3 ohm-cm; the mobility, 1.45cm{sup}2/V-s; and the hole concentration, 5×10{sup}20 cm{sup}(-3).