Schottky barrier diodes made with Sihyphen;doped Al metallization onnhyphen;type Si exhibit aging at temperatures between 200 and 300thinsp;deg;C. The barrier height of these devices depends on the square root of time. A crystallized layer of Si on the devices, grown from the Alhyphen;Si metal, contains a certain amount of Al, which acts as aphyphen;type dopant. The aging of the diodes is a direct result of variations in the amount of this Al, about which information can therefore be inferred from the kinetics of the aging process. The results are compared to those for pure Al Schottky contacts to Si, which do not age with time at these temperatures.
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