Roomhyphen;temperature laser operation of AlGaAs/GaAs double heterostructures fabricated on Si substrates by metalorganic chemical vapor deposition

摘要

AlGaAs/GaAs double heterostructure laser diodes have been fabricated on Si substrates using GaP/(GaP/GaAsP) superlattice/(GaAsP/GaAs) superlattice intermediate layers grown by metalorganic chemical vapor deposition. A threshold current density at 16.5thinsp;deg;C and a characteristic temperatureT0of 4.9 kA/cm2and 179 K respectively have been obtained for the diode on Si substrate.