Resonant tunneling in semiconductor double barriers

摘要

Resonant tunneling of electrons has been observed in doublehyphen;barrier structures having a thin GaAs sandwiched between two GaAlas barriers. The resonance manifests itself as peaks or humps in the tunneling current at voltages near the quasistationary states of the potential well. The structures have been fabricated by molecular beam epitaxy which produces extremely smooth films and interfaces.