Ar (3P2) induced chemical vapor deposition of hydrogenated amorphous silicon

摘要

Energy transfer from metastable argon lsqb;Ar (3P2)rsqb; to SiH4was applied to prepare hydrogenated amorphous silicon films. The emission due to the transition of SiH (A2Dgr;ndash;X2Pgr;) was observed when SiH4reacted with Ar (3P2). The electric and optical properties of the films were investigated as functions of substrate temperature. The conductivity of the film prepared at 100thinsp;deg;C is 10minus;10OHgr;minus;1thinsp;cmminus;1in the dark and 10minus;5OHgr;minus;1thinsp;cmminus;1under illumination with a photon flux of 1015cmminus;2thinsp;sminus;1. Hydrogen is found to be incorporated into the films mainly in the monohydride configuration even at a substrate temperature as low as 40thinsp;deg;C.