Saturation of Si atom concentration in Si planarhyphen;doped InP layers grown by metalorganic chemical vapor deposition

摘要

A mechanism which causes saturation in Si atom concentration in planarhyphen;doped InP layers was investigated. The layers were grown by atmospheric metalorganic chemical vapor deposition (MOCVD) and planar doping was performed by supplying Si2H6in PH3atmosphere. We found that the sheet Si atom concentration of the layerssaturatedasafunctionofdopingtime. We propose a new model which can describe the saturation as competition between adsorption and desorption. This model will describe the doping time dependence and the PH3flow rate dependence of sheet Si atom concentration of planarhyphen;doped InP layers grown by MOCVD.