Demonstration of large peakhyphen;tohyphen;valley current ratios in InAs/AlGaSb/InAs singlehyphen;barrier heterostructures

摘要

We report large peakhyphen;tohyphen;valley current ratios in InAs/AlxGa1minus;xSb/InAs singlehyphen;barrier tunnel structures. The mechanism for singlehyphen;barrier negative differential resistance (NDR) has been proposed and demonstrated recently. A peakhyphen;tohyphen;valley current ratio of 3.4 (1.2) at 77 K (295 K), which is substantially larger than what has been previously reported, was observed in a 200hyphen;Aring;hyphen;thick Al0.42Ga0.58Sb barrier. A comparison with a calculated currenthyphen;voltage curve yields good agreement in terms of peak current and the slope of the NDR region. The singlehyphen;barrier structure is a candidate for highhyphen;speed devices because of expected short tunneling times and a wide NDR region.